| PART |
Description |
Maker |
| MHL21336 |
2110 MHz - 2170 MHz RF/MICROWAVE NARROW BAND HIGH POWER AMPLIFIER
|
FREESCALE SEMICONDUCTOR INC
|
| PTF210451E PTF210451F PTFA210451E |
Thermally-Enhanced High Power RF LDMOS FETs 45 W, 2010 ?2025 MHz and 2110 ?2170 MHz
|
Infineon Technologies AG
|
| SI-5R2.140G-T |
2110 MHz - 2170 MHz RF/MICROWAVE ISOLATOR
|
HITACHI METALS LTD
|
| PTF180101 PTF180101S |
LDMOS RF Power Field Effect Transistor 10 W 1805-1880 MHz 1930-1990 MHz 10 W 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W, 1805-1880 MHz, 1930-1990 MHz 10 W, 2110-2170 MHz
LDMOS RF Power Field Effect Transistor 10 W/ 1805-1880 MHz/ 1930-1990 MHz 10 W/ 2110-2170 MHz
|
INFINEON[Infineon Technologies AG]
|
| MHL21336 |
MHL21336 2110-2170 MHz, 3 W, 31 dB RF Linear LDMOS Amplifier
|
Motorola
|
| MHPA21010 |
MHPA21010 2110-2170 MHz, 10 W, 23.7 dB RF High Power LDMOS Amplifier
|
Motorola
|
| PTFA210601E PTFA210601F |
Thermally-Enhanced High Power RF LDMOS FETs 60 W, 2110 鈥?2170 MHz
|
Infineon Technologies AG
|
| MAPLST2122-030CF |
RF Power Field Effect Transistor LDMOS, 2110 - 2170 MHz, 30W, 28V
|
Tyco Electronics
|
| MRF6S21100NBR1 MRF6S21100N |
Designed for W-CDMA base station applications with frequencies from 2110 to 2170 MHz
|
Freescale Semiconductors
|
| PTFB213004F |
High Power RF LDMOS Field Effect Transistor 300 W, 2110-2170 MHz
|
Infineon Technologies AG
|
| MRF7S21170H |
2110?2170 MHz, 50 W Avg., 28 V Single W?CDMA Lateral N?Channel RF Power MOSFETs
From old datasheet system
|
Motorola Semiconductor Products
|
| MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3 |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
|
Freescale (Motorola)
MOTOROLA[Motorola, Inc]
|
